High-Quality and Wafer-Scale Cubic Silicon Carbide Single Crystals-Energy & Environmental Materials2024年04期-手机知网

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High-Quality and Wafer-Scale Cubic Silicon Carbide Single Crystals

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences;University of Chinese Academy of Sciences | Guobin Wang Da Sheng Yunfan Yang Hui Li Congcong Chai Zhenkai Xie Wenjun Wang Jiangang Guo Xiaolong Chen

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Cubic silicon carbide (3C-SiC) has superior mobility and thermal conduction over that of widely applied hexagonal 4H-SiC.More...

机　构:

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences；University of Chinese Academy of Sciences；

领　域:

关键词:

cubic SiC；high-temperature solution growth；high-temperature surface tension；solid-liquid interfacial energy；wide band gap semiconductor；

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Energy & Environmental Materials

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